The material system matters as much as the geometry. NEON highlights InGaAs p-i-n photodiodes as especially useful for lightwave applications because lattice-matched InGaAs absorbs strongly in the 1.3–1.6 μm region while InP can act as the surrounding transparent material. The tutorial also notes that direct-bandgap semiconductors such as InGaAs can use much thinner depletion widths than indirect-bandgap materials like Si or Ge, leading to faster carrier transit and useful detector bandwidth for high-speed systems. This is one reason InGaAs photodetector is such a common keyword in communication and microwave-photonics discussions.
https://www.neoncq.com/fcpd-ingaas-photodetector
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